66N3LLH5
Description
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
Key Features
- AEC-Q101 qualified
- Low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power loss
- Wettable flank package
