96N3LLH6
Overview
This product is an N-channel Power MOSFET that utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 3 1 DPAK.
- RDS(on) * Qg industry benchmark
- Extremely low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power losses
