9NK60Z
Features
Order codes STB9NK60ZT4
STP9NK60Z STP9NK60ZFP
VDS RDS(on) max ID PTOT
600 V
125 W 0.95 Ω 7 A
30 W
- Extremely high dv/dt capability
- Improved ESD capability
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitances
3 1
D2PAK
3 2 1
TO-220
3 2 1
TO-220FP
Applications
- Switching applications
Figure 1. Internal schematic diagram , TAB
Description
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' Super MESH™ technology, achieved through optimization of ST's well established strip-based Power MESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
SC15010
Table 1. Device summary Order codes
STB9NK60ZT4 STP9NK60Z
STP9NK60ZFP
Marking B9NK60Z P9NK60Z P9NK60ZFP
Package D2PAK TO-220 TO-220FP
Packaging Tube
January 2013
This is information on a product in full production.
Doc ID...
