Order codes STD9NM60N STF9NM60N STP9NM60N VDSS (@Tjmax) RDS(on) max. 650 V < 0.745 Ω ID 6.5 A
* 100% avalanche tested
* Low input capacitance and gate charg.

Description This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Pow.

This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. I.

9NM60

9NM60-FDS

9NM60-S

9NM65

9NM65-FD

9NM65-FDS

9NM70

9NM70-FDS

9NM70-S

9NM95-Q

9NM95Z

9N100

9N120-E3