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9NM60N Datasheet - STMicroelectronics

STD9NM60N

9NM60N General Description

This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding hig.

9NM60N Datasheet (464.97 KB)

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