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STMicroelectronics Electronic Components Datasheet

A1P35S12M3-F Datasheet

IGBT

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A1P35S12M3-F
Datasheet
ACEPACK™ 1 sixpack topology, 1200 V, 35 A,
trench gate fieldstop M series IGBT with soft diode and NTC
ACEPACK™ 1
Features
• ACEPACK™ 1 power module
– DBC Cu Al2O3 Cu
• Sixpack topology
– 1200 V, 35 A IGBTs and diodes
– Soft and fast recovery diode
• Integrated NTC
Applications
• Inverters
• Industrial
• Motor drives
Description
This power module is a sixpack topology in an ACEPACK™ 1 package with NTC,
integrating the advanced trench gate field-stop technologies from
STMicroelectronics. This new IGBT technology represents the best compromise
between conduction and switching loss, to maximize the efficiency of any converter
system up to 20 kHz.
Product status
A1P35S12M3-F
Product summary
Order code
A1P35S12M3-F
Marking
A1P35S12M3-F
VCES, IC ratings
1200 V, 35 A
Package
ACEPACK™ 1
Packing
Press fit contact pins
DS11636 - Rev 5 - November 2018
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

A1P35S12M3-F Datasheet

IGBT

No Preview Available !

1 Electrical ratings
A1P35S12M3-F
Electrical ratings
1.1
IGBT
Limiting values at TJ = 25 °C, unless otherwise specified.
Table 1. Absolute maximum ratings of the IGBT
Symbol
Parameter
VCES
Collector-emitter voltage (VGE = 0 V)
IC Continuous collector current (TC = 100 °C)
ICP(1)
Pulsed collector current (tp = 1 ms)
VGE Gate-emitter voltage
PTOT
Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C)
TJMAX
Maximum junction temperature
TJop Operating junction temperature range under switching conditions
1. Pulse width limited by maximum junction temperature.
Value
1200
35
70
±20
250
175
-40 to 150
Unit
V
A
A
V
W
°C
°C
Symbol
V(BR)CES
VCE(sat)
(terminal)
VGE(th)
ICES
IGES
Cies
Coes
Cres
Qg
td(on)
tr
Eon(1)
td(off)
tf
Eoff(2)
Table 2. Electrical characteristics of the IGBT
Parameter
Test conditions
Collector-emitter breakdown
voltage
IC = 1 mA, VGE = 0 V
Collector-emitter saturation
voltage
VGE = 15 V, IC= 35 A
VGE = 15 V, IC = 35 A,
TJ = 150 ˚C
Gate threshold voltage
VCE = VGE, IC = 1 mA
Collector cut-off current
VGE = 0 V, VCE = 1200 V
Gate-emitter leakage current VCE = 0 V, VGE = ± 20 V
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 25 V, f = 1 MHz,
VGE = 0 V
Total gate charge
Turn-on delay time
Current rise time
Turn-on switching energy
VCC = 960 V, IC = 35 A,
VGE = ±15 V
VCC = 600 V, IC = 35 A,
RG = 10 Ω, VGE = ±15 V,
di/dt = 1900 A/µs
Turn-off delay time
Current fall time
Turn-off switching energy
VCC = 600 V, IC = 35 A,
RG = 10 Ω, VGE = ±15 V,
dv/dt = 7800 V/µs
Min.
1200
5
Typ.
1.95
2.3
6
2154
164
86
163
122
17
1.21
142
150
2.19
Max.
2.45
7
100
± 500
Unit
V
V
V
µA
nA
pF
pF
pF
nC
ns
ns
mJ
ns
ns
mJ
DS11636 - Rev 5
page 2/16


Part Number A1P35S12M3-F
Description IGBT
Maker STMicroelectronics
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