1 Electrical ratings
A1P35S12M3-F
Electrical ratings
1.1
IGBT
Limiting values at TJ = 25 °C, unless otherwise specified.
Table 1. Absolute maximum ratings of the IGBT
Symbol
Parameter
VCES
Collector-emitter voltage (VGE = 0 V)
IC Continuous collector current (TC = 100 °C)
ICP(1)
Pulsed collector current (tp = 1 ms)
VGE Gate-emitter voltage
PTOT
Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C)
TJMAX
Maximum junction temperature
TJop Operating junction temperature range under switching conditions
1. Pulse width limited by maximum junction temperature.
Value
1200
35
70
±20
250
175
-40 to 150
Unit
V
A
A
V
W
°C
°C
Symbol
V(BR)CES
VCE(sat)
(terminal)
VGE(th)
ICES
IGES
Cies
Coes
Cres
Qg
td(on)
tr
Eon(1)
td(off)
tf
Eoff(2)
Table 2. Electrical characteristics of the IGBT
Parameter
Test conditions
Collector-emitter breakdown
voltage
IC = 1 mA, VGE = 0 V
Collector-emitter saturation
voltage
VGE = 15 V, IC= 35 A
VGE = 15 V, IC = 35 A,
TJ = 150 ˚C
Gate threshold voltage
VCE = VGE, IC = 1 mA
Collector cut-off current
VGE = 0 V, VCE = 1200 V
Gate-emitter leakage current VCE = 0 V, VGE = ± 20 V
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 25 V, f = 1 MHz,
VGE = 0 V
Total gate charge
Turn-on delay time
Current rise time
Turn-on switching energy
VCC = 960 V, IC = 35 A,
VGE = ±15 V
VCC = 600 V, IC = 35 A,
RG = 10 Ω, VGE = ±15 V,
di/dt = 1900 A/µs
Turn-off delay time
Current fall time
Turn-off switching energy
VCC = 600 V, IC = 35 A,
RG = 10 Ω, VGE = ±15 V,
dv/dt = 7800 V/µs
Min.
1200
5
Typ.
1.95
2.3
6
2154
164
86
163
122
17
1.21
142
150
2.19
Max.
2.45
7
100
± 500
Unit
V
V
V
µA
nA
pF
pF
pF
nC
ns
ns
mJ
ns
ns
mJ
DS11636 - Rev 5
page 2/16
