STMicroelectronics A2C50S65M2
This power module is a converter-inverter brake (CIB) topology in an ACEPACK™ 2 package with NTC, integrating the advanced trench gate field-stop technology from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz.A2C50S65M2 Specifications
- Max Collector Current : 50A
- Terminals : 35
- Collector Emitter Voltage : 650V
- Collector Emitter Saturation Voltage : 2.3V
- Max Power Dissipation : 208W
- Max Operating Temp : 150°C
- Min Operating Temp : -40°C
Source:
Octopart
| Part No. | A2C50S65M2 |
|---|---|
| Datasheet | A2C50S65M2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 50A trench gate field-stop IGBT |
| Buy | Stock & Price |
FEATURES
● ACEPACK™ 2 power module – DBC Cu Al2O3 Cu● Converter inverter brake topology – 1600 V, very low drop rectifiers for converter – 650 V, 50 A IGBTs and diodes – Soft and fast recovery diode
● Integrated NTC
APPLICATIONS
● Inverters● Motor drives
DESCRIPTION
Product status A2C50S65M2 Product summary Order code A2C50S65M2 Marking A2C50S65M2 Package ACEPACK™ 2 Leads type Solder contact pins DS12340 - Rev 3 - November 2018 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings A2C50S65M2 Electrical ratings 1.1 1.1.1 Inverter stage Limiting values at TJ = 25 °C, unless otherwise specified. IGBTs Table 1. Absolute maximum ratings of the IGBTs, inverter stage SymbolDESCRIPTION
VCES Collector-emitter voltage (VGE = 0 V) IC Continuous collector current (TC = 100 °C) ICP(1) Pulsed collector current (tp = 1 ms) VGE Gate-emitter voltage PTOT Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C) TJMAX Maximum junction temperature TJop Operating junction temperature range under switching conditions 1.
