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A2C50S65M2 Datasheet

50A trench gate field-stop IGBT

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A2C50S65M2
Datasheet
ACEPACK™ 2 converter inverter brake, 650 V, 50 A trench gate field-stop IGBT
M series, soft diode and NTC
ACEPACK™ 2
Features
• ACEPACK™ 2 power module
– DBC Cu Al2O3 Cu
• Converter inverter brake topology
– 1600 V, very low drop rectifiers for converter
– 650 V, 50 A IGBTs and diodes
– Soft and fast recovery diode
• Integrated NTC
Applications
• Inverters
• Motor drives
Description
This power module is a converter-inverter brake (CIB) topology in an ACEPACK™ 2
package with NTC, integrating the advanced trench gate field-stop technology from
STMicroelectronics. This new IGBT technology represents the best compromise
between conduction and switching loss, to maximize the efficiency of any converter
system up to 20 kHz.
Product status
A2C50S65M2
Product summary
Order code
A2C50S65M2
Marking
A2C50S65M2
Package
ACEPACK™ 2
Leads type
Solder contact pins
DS12340 - Rev 3 - November 2018
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

A2C50S65M2 Datasheet

50A trench gate field-stop IGBT

No Preview Available !

1 Electrical ratings
A2C50S65M2
Electrical ratings
1.1
1.1.1
Inverter stage
Limiting values at TJ = 25 °C, unless otherwise specified.
IGBTs
Table 1. Absolute maximum ratings of the IGBTs, inverter stage
Symbol
Description
VCES
Collector-emitter voltage (VGE = 0 V)
IC Continuous collector current (TC = 100 °C)
ICP(1)
Pulsed collector current (tp = 1 ms)
VGE Gate-emitter voltage
PTOT
Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C)
TJMAX
Maximum junction temperature
TJop Operating junction temperature range under switching conditions
1. Pulse width limited by maximum junction temperature
Value
650
50
100
±20
208
175
-40 to 150
Unit
V
A
A
V
W
°C
°C
Symbol
V(BR)CES
VCE(sat)
(terminal)
VGE(th)
ICES
IGES
Cies
Coes
Cres
Qg
td(on)
tr
Eon(1)
Table 2. Electrical characteristics of the IGBTs, inverter stage
Parameter
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
Gate-emitter leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Current rise time
Turn-on switching energy
Test conditions
IC = 1 mA, VGE = 0 V
VGE = 15 V, IC= 50 A
VGE = 15 V, IC = 50 A,
TJ = 150 ˚C
VCE = VGE, IC = 1 mA
VGE = 0 V, VCE = 650 V
VCE = 0 V, VGE = ±20 V
VCE = 25 V, f = 1 MHz,
VGE = 0 V
VCC = 520 V, IC = 50 A,
VGE = ±15 V
VCC = 300 V, IC = 50 A,
RG = 6.8 Ω, VGE = ±15 V,
di/dt = 2320 A/µs
Min.
650
Typ.
1.95
2.3
56
4150
170
80
150
147
17.5
0.147
Max.
Unit
V
2.3 V
V
7V
100 μA
±500 nA
pF
pF
pF
nC
ns
ns
mJ
DS12340 - Rev 3
page 2/16


Part Number A2C50S65M2
Description 50A trench gate field-stop IGBT
Maker STMicroelectronics
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A2C50S65M2 Datasheet PDF






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