* AQG 324 qualified
* 1200 V blocking voltage
* 1.9 mΩ of typical RDS(on)
* Maximum operative junction temperature TJ = 175 °C
* Very low switching energy
* Low inductive compact design for an higher power density
* Si3N4 AMB substrate to impro
ADP480120W3-L Datasheet (2.64 MB)
ADP480120W3-L
2.64 MB
Automotive-grade acepack drive power module.
ADP480120W3-L Datasheet Automotive-grade ACEPACK DRIVE power module, sixpack topology 1200 V, 1.9 mΩ typ. SiC MOSFET gen.3 based ACEPACK DRIVE Produ.
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