AM81719-030 transistors equivalent, rf & microwave transistors.
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PRELIMINARY DATA
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTP.
The AM81719-030 is a high power silicon NPN bipolar transistor designed for Class C, CW communications and telemetry applications in the 1.75 - 1.85 GHz frequency range. An emitter site ballasted refractory/gold overlay die geometry computerized auto.
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