AM81719-040 Datasheet - STMicroelectronics

AM81719-040, RF & MICROWAVE TRANSISTORS

AM81719-040 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS *.PRELIMINARY DAT A REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INP.
The AM81719-040 is a high power silicon NPN bipolar transistor designed for Class C, CW communications and telemetry applications in the 1.

Applications

* . PRELIMINARY DAT A REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 40 W MIN. WITH 7 dB GAIN .400 X .400 2 LF L (M228) hermetically sealed ORDER CO DE AM81719-040 BRANDING 81719-40 PIN CONNECTION DESCRIPT

AM81719-040_STMicroelectronics.pdf