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AM81719-040 - RF & MICROWAVE TRANSISTORS

AM81719-040 Description

AM81719-040 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS *.PRELIMINARY DAT A REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INP.
The AM81719-040 is a high power silicon NPN bipolar transistor designed for Class C, CW communications and telemetry applications in the 1.

AM81719-040 Applications

* . PRELIMINARY DAT A REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 40 W MIN. WITH 7 dB GAIN .400 X .400 2 LF L (M228) hermetically sealed ORDER CO DE AM81719-040 BRANDING 81719-40 PIN CONNECTION DESCRIPT

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MICROWAVE TRANSISTORS STMicroelectronics
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