AM81719-030 Datasheet - STMicroelectronics

AM81719-030, RF & MICROWAVE TRANSISTORS

AM81719-030 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS *..PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LO.
The AM81719-030 is a high power silicon NPN bipolar transistor designed for Class C, CW communications and telemetry applications in the 1.

Applications

* . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 28 W MIN. WITH 6.7 dB GAIN .400 SQ 2LFL (M147) hermetically sealed ORDER CODE AM81719-030 BRANDING 81719-030 PI

AM81719-030_STMicroelectronics.pdf