Datasheet4U Logo Datasheet4U.com

B11NM80 Datasheet - STMicroelectronics

N-CHANNEL Power MOSFET

B11NM80 Features

* Order codes VDSS RDS(on) max RDS(on)

* Qg ID STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80 < 0.40 Ω 14Ω

* nC 11 A

* Low input capacitance and gate charge

* Low gate input resistance

* Best RDS(on)

* Qg in the industry Applications

* Switching applications D

B11NM80 General Description

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Ut.

B11NM80 Datasheet (879.67 KB)

Preview of B11NM80 PDF

Datasheet Details

Part number:

B11NM80

Manufacturer:

STMicroelectronics ↗

File Size:

879.67 KB

Description:

N-channel power mosfet.
STB11NM80, STF11NM80 STI11NM80, STP11NM80, STW11NM80 N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247 Fea.

📁 Related Datasheet

B11NM60 N-CHANNEL Power MOSFET (STMicroelectronics)

B11NM60 N-Channel 30V MOSFET (VBsemi)

B11NM60N N-CHANNEL Power MOSFET (STMicroelectronics)

B11NK50Z N-CHANNEL Power MOSFET (STMicroelectronics)

B110 Low Voltage X-Ray Tube (Ferranti)

B1100 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)

B1100 SCHOTTKY BARRIER RECTIFIERS (CTC)

B1100B 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)

B1100BQ 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER (Diodes)

B1100CALRP SIDACtor Protection Thyristors (Littelfuse)

TAGS

B11NM80 N-CHANNEL Power MOSFET STMicroelectronics

Image Gallery

B11NM80 Datasheet Preview Page 2 B11NM80 Datasheet Preview Page 3

B11NM80 Distributor