B20NK50Z Datasheet - STMicroelectronics

N-Channel MOSFET

B20NK50Z Features

* Type VDSS RDS(on) max ID PW STB20NK50Z 500 V < 0.27 Ω 17 A 190 W ct(s)

* Extremely high dv/dt capability du

* 100% avalanche tested ro

* Gate charge minimized P

* Very low intrinsic capacitances te

* Very good manufacturing repeatability sole Application Ob

* Switching

B20NK50Z General Description

c This device is an N-channel Zener-protected u Power MOSFET developed using d STMicroelectronics’ SuperMESH™ technology, ro achieved through optimization of ST’s well P established strip-based PowerMESH™ layout. In te addition to a significant reduction in on- resistance, this device is designed to.

B20NK50Z Datasheet (431.82 KB)