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STMicroelectronics Electronic Components Datasheet

B80NF55-06T Datasheet

N-CHANNEL POWER MOSFET

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STB80NF55-06T
Datasheet
Automotive-grade N-channel 55 V, 5 mΩ typ., 80 A, STripFET™ II
Power MOSFET in a D²PAK package
TAB
2
3
1
D²PAK
D(2, TAB)
G(1)
S(3)
AM01475v1_noZen
Features
Type
STB80NF55-06T
VDSS
55 V
RDS(on) max.
6.5 mΩ
ID
80 A
• AEC-Q101 qualified
• Exceptional dv/dt capability
• 100% avalanche tested
• Low gate charge
Applications
• Switching applications
Description
This Power MOSFET series has been developed using STMicroelectronics' unique
STripFET™ process, which is specifically designed to minimize input capacitance
and gate charge. This renders the device suitable for use as primary switch in
advanced high-efficiency isolated DC-DC converters for telecom and computer
applications, and applications with low gate charge driving requirements.
Product status link
STB80NF55-06T
Product summary
Order code
STB80NF55-06T
Marking
B80NF55-06T
Package
D²PAK
Packing
Tape and reel
DS8852 - Rev 2 - September 2018
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

B80NF55-06T Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage
VGS
Gate-source voltage
Drain current (continuous) at TC = 25 °C
ID(1)
Drain current (continuous) at TC = 100 °C
IDM(2)
Drain current (pulsed)
PTOT
Total dissipation at TC = 25 °C
P1
Long term load test (ID= 100 A, VDS= 1.5 V,
tpulse=10 ms) ΔVSD (tested)
P2 (3)
Short term load test (ID= 75 A, VDS= 15 V,
tpulse=700 μs) ΔVSD (not tested)
EAS(4)
Single-pulse avalanche energy
dv/dt(5)
Peak diode recovery voltage slope
Tstg
Storage temperature range
Tj
Operating junction temperature range
1. Current limited by package.
2. Pulse width limited by safe operating area.
3. Defined by design, not subject to production test.
4. Starting TJ = 25 °C, ID = 30 A, VDD = 30 V
5. ISD ≤ 80 A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-pcb(1)
Thermal resistance junction-pcb
1. When mounted on an FR-4 board of 1 inch², 2 oz Cu.
STB80NF55-06T
Electrical ratings
Value
Unit
55
V
±20
V
80
A
80
A
320
A
300
W
150
W
1125
1.3
7
-55 to 175
W
J
V/ns
°C
Value
0.5
35
Unit
°C/W
°C/W
DS8852 - Rev 2
page 2/16


Part Number B80NF55-06T
Description N-CHANNEL POWER MOSFET
Maker STMicroelectronics
PDF Download

B80NF55-06T Datasheet PDF






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