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BTB04 Datasheet

SENSITIVE GATE TRIACS

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BTA04 T/D/S/A
® BTB04 T/D/S/A
SENSITIVE GATE TRIACS
FEATURES
A2
s Very low IGT = 10mA max
s Low IH = 15mA max
G
s BTA Family:
Insulating voltage = 2500V(RMS)
A1
(UL recognized: E81734)
t(s)DESCRIPTION
The BTA/BTB04 T/D/S/A triac family are high per-
cformance glass passivated PNPN devices.
uThese parts are suitables for general purpose ap-
dplications where gate high sensitivity is required.
roApplication on 4Q such as phase control and static
Pswitching.
A1
A2
G
TO-220AB
bsoleteABSOLUTE RATINGS (limiting values)
OSymbol
-IT(RMS)
t(s)ITSM
ducI2t
rodI/dt
lete PTstg
Tj
ObsoTl
Parameter
RMS on-state current (360° conduction angle)
Non repetitive surge peak on-state current
(Tj initial = 25°C)
I2t value
Critical rate of rise of on-state current
Gate supply: IG = 50mA dIG/dt = 0.1A/µs
BTA
BTB
Storage and operating junction temperature range
Tc = 90°C
Tc = 95°C
tp = 8.3ms
tp = 10ms
tp = 10ms
Repetitive
F = 50Hz
Non repetitive
Maximum lead soldering temperature during 10s at 4.5mm from case
Value
4
Unit
A
42 A
40
8 A2s
10 A/µs
50
-40 to +150
-40 to +110
260
°C
°C
Symbol
Parameter
VDRM Repetitive peak off-state voltage Tj = 110°C
VRRM
BTA / BTB04-
Unit
400 T/D/S/A 600 T/D/S/A 700 T/D/S/A
400 600 700 V
September 2001 - Ed: 1A
1/6


STMicroelectronics Electronic Components Datasheet

BTB04 Datasheet

SENSITIVE GATE TRIACS

No Preview Available !

BTA04 T/D/S/A BTB04 T/D/S/A
THERMAL RESISTANCE
Symbol
Rth (j-a)
Rth (j-c) DC
Junction to ambient
Junction to case for DC
Parameter
Rth (j-c) AC Junction to case for 360° conduction angle (F = 50Hz)
BTA
BTB
BTA
BTB
Value
60
4.4
3.2
3.3
2.4
GATE CHARACTERISTICS (maximum values)
PG(AV) = 1W PGM = 40W (tp = 20µs) IGM = 4A (tp = 20µs) VGM = 16V (tp = 20µs)
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
BTA / BTB04
Symbol
Test conditions
Quadrant
Unit
TDSA
t(s)IGT VD = 12V (DC) RL = 33Tj = 25°C I - II - III MAX. 5 5 10 10 mA
cIV MAX. 5 10 10 25
duVGT VD = 12V (DC) RL = 33
Tj = 25°C I - II - III - IV MAX.
roVGD
VD = VDRM
RL = 3.3kTj =110°C I - II - III - IV MIN.
1.5
0.2
V
V
te Ptgt VD = VDRM IG = 40mA
dIG/dt = 0.5A/µs
Tj = 25°C I - II - III - IV TYP.
2
µs
oleIL IG = 1.2IGT
Tj = 25°C I - III - IV TYP. 10 10 20 20 mA
bsII 20 20 40 40
OIH* IT = 100mA Gate open
Tj = 25°C
MAX. 15 15 25 25 mA
) -VTM * ITM = 5.5A tp = 380µs
Tj = 25°C
MAX.
1.65
V
t(sIDRM
ucIRRM
VDRM rated
VRRM rated
Tj = 25°C
Tj = 110°C
MAX.
MAX.
0.01
0.75
mA
roddV/dt * Linear slope up to
PVD = 67% VDRM gate open
Tj = 110°C
TYP. 10 10 -
- V/µs
MIN. -
- 10 10
te(dI/dt)c* (dI/dt)c = 1.8A/ms
Tj = 110°C
TYP. 1 1 5 5 V/µs
Obsole* For either polarity of electrode A2 voltage with reference to electrode A1
2/6


Part Number BTB04
Description SENSITIVE GATE TRIACS
Maker ST Microelectronics
Total Page 6 Pages
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