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BTB08-600BW Datasheet

logic level and standard 8A Triacs

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BTA08, BTB08, T810
T835, T850
Datasheet
Snubberless™, logic level and standard 8 A Triacs
A2
G
A2 A1
Features
• On-state rms current, IT(RMS) 8 A
• Repetitive peak off-state voltage, VDRM / VRRM 600 V to 800 V
• Triggering gate current, IGT 5 to 50 mA
TO-220AB
A2
IPAK
G
A2
A1
A2
G
A2
A1
TO-220AB Ins.
D²PAK
A2 G
A1
A2
G
A2
A1
A2 G
A1
DPAK
Description
Available either in through-hole and surface-mount packages, these devices are
suitable for general purpose AC switching. They can be used as an ON/OFF function
in applications such as static relays, heating regulation, induction motor starting
circuits or for phase control operation in light dimmers and motor speed controllers,
etc.
The Snubberless versions (BTA, BTB08_xxxxW and T8 series) are specially
recommended for use on inductive loads, thanks to their high commutation
performance.
Logic level versions are designed to interface directly with low power drivers such as
Microcontrollers.
By using an internal ceramic pad, the BTA series provide voltage insulated tab (rated
at 2500 VRMS) in compliance with UL standards (file ref.: E81734).
Product status link
BTA08
BTB08
T810
T835
T850
DS2114 - Rev 15 - August 2018
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

BTB08-600BW Datasheet

logic level and standard 8A Triacs

No Preview Available !

BTA08, BTB08, T810, T835, T850
Characteristics
1 Characteristics
Table 1. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)
Symbol
Parameter
Value Unit
IT(RMS) RMS on-state current (full sine wave)
ITSM
Non repetitive surge peak on-state current (full
cycle, Tj initial = 25 °C)
I2t I2t value for fusing
dl/dt
Critical rate of rise of on-state current IG = 2 x
IGT, tr ≤ 100 ns
IGM Peak gate current
PG(AV) Average gate power dissipation
Tstg Storage junction temperature range
Tj Operating junction temperature range
IPAK, DPAK,TO-220AB, D²PAK Tc = 110 °C
TO-220AB Ins.
Tc = 100 °C
f = 50 Hz
t = 20 ms
f = 60 Hz
tp = 16.7 ms
tp = 10 ms
8
80
84
36
A
A
A2s
f = 120 Hz
Tj = 125 °C
50 A/µs
tp = 20 µs
Tj = 125 °C
Tj = 125 °C
4
1
-40 to +150
A
W
°C
-40 to +125 °C
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Snubberless and logic level (3
quadrants)
Symbol
Parameter
Quadrant
T8
10 35 50
BTA08/BTB08
TW SW CW BW
Unit
IGT (1)
VGT
VD = 12 V, RL = 30 Ω
I - II - III Max. 10 35 50 5 10 35 50 mA
I - II - III Max.
1.2
V
VGD VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C
I - II - III Min.
0.2
V
IH (2)
IT = 100 mA
I - II - III Max. 15 35 75 10 15 35 50 mA
IL IG = 1.2 x IGT
I - III
II
Max. 25 50 70 10 25 50 70
mA
Max. 30 60 110 15 30 60 80
dV/dt (2) VD = 67% VDRM, gate open, Tj = 125 °C
Max. 40 400 1000 20 40 400 1000 V/µs
(dV/dt)c = 0.1 V/µs, Tj = 125 °C
Min. 5.4
3.5 5.4
(dl/dt)c (2) (dV/dt)c = 10 V/µs, Tj = 125 °C
Min. 2.8
1.5 2.98
A/ms
Without snubber, Tj = 125 °C
Min. 4.5 7
4.5 7
1. Minimum IGT is guaranteed at 5 % of IGT max.
2. For both polarities of A2 referenced to A1
DS2114 - Rev 15
page 2/21


Part Number BTB08-600BW
Description logic level and standard 8A Triacs
Maker STMicroelectronics
Total Page 21 Pages
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