Datasheet Details
| Part number | BTB08-600B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 155.60 KB |
| Description | Thyristor |
| Datasheet | BTB08-600B-INCHANGE.pdf |
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Overview: isc Thyristors INCHANGE Semiconductor BTB08-600B.
| Part number | BTB08-600B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 155.60 KB |
| Description | Thyristor |
| Datasheet | BTB08-600B-INCHANGE.pdf |
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·With TO-220 packaging ·Can be operated in 4 quadrants ·Advanced technology to provide customers with high commutation performances ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) Average on-state current Tc=75℃ ITSM Surge non-repetitive on-state current 50HZ 60HZ PG(AV) Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature MAX UNIT 600 V 600 V 8 A 80 84 A 1 W -40~125 ℃ -40~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BTB08-600B ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated;
Tj=25℃ VD=VDRM Rated;
Tj=125℃ 0.01 0.5 mA VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=11A；tP=380μs Ⅰ Ⅱ VD =12V;RL=33Ω;
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