Datasheet Details
| Part number | BTB08-600C |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 155.84 KB |
| Description | Thyristor |
| Datasheet | BTB08-600C-INCHANGE.pdf |
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Overview: isc Thyristors INCHANGE Semiconductor BTB08-600C.
| Part number | BTB08-600C |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 155.84 KB |
| Description | Thyristor |
| Datasheet | BTB08-600C-INCHANGE.pdf |
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·With TO-220 packaging ·Operating in 4 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak reverse voltage IT(RSM) Average on-state current ITSM Surge non-repetitive on-state current 600 V @Tc=110℃ 8 A 50Hz 60Hz 80 84 A PG(AV) Average gate power dissipation ( over any 20 ms period ) 1 W Tj Operating junction temperature -40~125 ℃ Tstg Storage temperature -40~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BTB08-600C ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VR=VRRM Rated;
Tj=25℃ IDRM Repetitive peak off-state current VD=VDRM Rated;
Tj=125℃ 5 μA 1 mA VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage IT=11A;tP=380μs VD =12V;RL=33Ω VD =12V;RL=33Ω 1.55 V Ⅰ 25 Ⅱ 25 mA Ⅲ 25 Ⅳ 50 1.3 V Rth (j-c) Junction to case For AC 1.6 ℃/W NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
| Brand Logo | Part Number | Description | Manufacturer |
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BTB08-600C | logic level and standard 8A Triacs | STMicroelectronics |
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BTB08-600CW | Three quadrant triacs | HAOPIN |
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