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BU508AW - High voltage NPN Power transistor

Description

The BU508AW is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure for updated performance to the Horizontal Deflection stage.

Features

  • State-of-the-art technology:.
  • Diffused collector “Enhanced generation” Stable performances versus operating temperature variation Low base-drive requirement Tight hFE range at operating collector current High ruggedness TO-247 semi-insulated power package In compliance with the 2002/93/EC European directive TO-247 1 2 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com BU508AW High voltage NPN Power transistor for standard Definition CRT display Preliminary Data Features ■ ■ ■ ■ ■ ■ ■ State-of-the-art technology: – Diffused collector “Enhanced generation” Stable performances versus operating temperature variation Low base-drive requirement Tight hFE range at operating collector current High ruggedness TO-247 semi-insulated power package In compliance with the 2002/93/EC European directive TO-247 1 2 3 Applications ■ ■ Internal schematic diagram Horizontal deflection output for CRT TV Switch mode power supplies for CRT TV Description The BU508AW is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure for updated performance to the Horizontal Deflection stage.
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