BUL39D transistor equivalent, high voltage fast-switching npn power transistor.
* Integrated antiparallel collector-emitter diode
* High voltage capability
* Low spread of dynamic parameters
* Minimum lot-to-lot spread for reliable op.
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds while maintaining the wide RBSOA. The device is designed for use in electronic transformer for halogen lamp.
TO-220
3 2 1
Figure 1. Internal .
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