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BUL39D - High voltage fast-switching NPN power transistor

General Description

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds while maintaining the wide RBSOA.

The device is designed for use in electronic transformer for halogen lamp.

Figure 1.

Key Features

  • Integrated antiparallel collector-emitter diode.
  • High voltage capability.
  • Low spread of dynamic parameters.
  • Minimum lot-to-lot spread for reliable operation.
  • Very high switching speed.

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BUL39D High voltage fast-switching NPN power transistor Features ■ Integrated antiparallel collector-emitter diode ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Application ■ Electronic transformer for halogen lamp Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds while maintaining the wide RBSOA. The device is designed for use in electronic transformer for halogen lamp. TO-220 3 2 1 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking BUL39D BUL39D Package TO-220 Packaging Tube October 2008 Rev 5 1/11 www.st.com 11 Contents Contents BUL39D 1 Electrical ratings . . . . . . . . . . . . .