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BULB128-1 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

General Description

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com ® BULB128-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code BULB128-1 s Marking BULB128 Shipment Tube s s s s s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED THROUGH HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX "-1") 3 12 APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.