STMicroelectronics BUX87
The BUX87 is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage withstand capability.FEATURES
● High voltage capability (450 V VCEO)● Minimum lot-to-lot spread for reliable operation
● High DC current gain
APPLICATIONS
● Flyback and forward single transistor low power convertersDESCRIPTION
1 2 3 SOT-32 Figure 1. Internal schematic diagram Table 1. Device summary Order code BUX87 Marking BUX87 Package SOT-32 April 2009 Doc ID 4508 Rev 5 Packaging Tube 1/9 9 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VCES VCEO VEBO IC ICM IB IBM PTOT Tstg TJ Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tp ≤ 5ms) Base current Base peak current (tp ≤ 5ms) Total power dissipation at Tc = 25 °C Storage temperature Max. operati