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BUX87 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.

General Description

·High Voltage capability : VCE(sus)= 450V(Min) ·Minimum lot-to-lot spread for reliable operation ·High DC current gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Fly back and Forward single transistor low Power converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 450 V VCEX Collector-Emitter Voltage 1000 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 0.5 A ICm Collector Current-Pulse 1 A Ptot Total Dissipation at Tc=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient isc website:www.iscsemi.com MAX UNIT 3.12 ℃/W 100 ℃/W 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUX87 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO Collector-Emitter Voltage IC=100mA VBEO Emitter-Base Voltage IC=10mA VCE(sat) Collector-Emitter Saturation Voltage IC= 0.1A;

IB= 0.01A IC= 0.2A;

IB= 0.02A VBE(sat) Base-Emitter Saturation Voltage IC= 0.2A;

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