| Part Number | BUX87 Datasheet |
|---|---|
| Manufacturer | Philips Semiconductors |
| Overview | . . |
BUX87 Datasheet and Specifications PDF
The BUX87 is a Silicon Diffused Power Transistor.
| Part Number | BUX87 Datasheet |
|---|---|
| Description | NPN SILICON HIGH VWLTAGE SWITCHING TRANSISTORS |
| Manufacturer | Siemens Semiconductor Group |
| Overview | . . |
| Part Number | BUX87 Datasheet |
|---|---|
| Description | High voltage NPN power transistor |
| Manufacturer | STMicroelectronics |
| Overview |
The BUX87 is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage withstand capability.
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SOT-32
Figure 1. Internal schematic diagram
Tabl.
* High voltage capability (450 V VCEO) * Minimum lot-to-lot spread for reliable operation * High DC current gain Applications * Flyback and forward single transistor low power converters Description The BUX87 is manufactured using high voltage multi-epitaxial planar technology for high switching spe. |
| Part Number | BUX87 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Voltage capability : VCE(sus)= 450V(Min) ·Minimum lot-to-lot spread for reliable operation ·High DC current gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operati. HANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUX87 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO Collector-Emitter Voltage IC=100mA VBEO Emitter-Base Voltage IC=10mA VCE(sat) Collector-Emitter Saturation V. |