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BUX87 - High voltage NPN power transistor

General Description

The BUX87 is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage withstand capability.

Figure 1.

Table 1.

Key Features

  • High voltage capability (450 V VCEO).
  • Minimum lot-to-lot spread for reliable operation.
  • High DC current gain.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BUX87 High voltage NPN power transistor Features ■ High voltage capability (450 V VCEO) ■ Minimum lot-to-lot spread for reliable operation ■ High DC current gain Applications ■ Flyback and forward single transistor low power converters Description The BUX87 is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage withstand capability. 1 2 3 SOT-32 Figure 1. Internal schematic diagram Table 1. Device summary Order code BUX87 Marking BUX87 Package SOT-32 April 2009 Doc ID 4508 Rev 5 Packaging Tube 1/9 www.st.com 9 Electrical ratings 1 Electrical ratings Table 2.