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BUX82 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min)-BUX82 = 450V(Min)-BUX83 High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

voltage.

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Datasheet Details

Part number BUX82
Manufacturer INCHANGE
File Size 201.47 KB
Description NPN Transistor
Datasheet download datasheet BUX82 Datasheet
Additional preview pages of the BUX82 datasheet.

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Full PDF Text Transcription

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isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min)-BUX82 = 450V(Min)-BUX83 ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as high-speed power switch at high voltage.
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