Download BUX82 Datasheet PDF
Inchange Semiconductor
BUX82
DESCRIPTION - Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min)-BUX82 = 450V(Min)-BUX83 - High Switching Speed - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use as high-speed power switch at high voltage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage BUX83 VCEO Collector-Emitter Voltage BUX83 VCER Collector-Emitter Voltage RBE= 50Ω BUX82 BUX83 500 500 VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base...