Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min)
High Switching Speed
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Switching regulators
Motor control
High frequency and efficiency converters
ABSOLUTE MAXIM
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isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulators ·Motor control ·High frequency and efficiency converters
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage VBE= 0
800
V
VCEO
Collector-Emitter Voltage
400
V
VCER
Collector-Emitter Voltage RBE= 50Ω
500
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
5
A
PC
Collector Power Dissipation @TC=25℃ 100
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERIS
BUX80 Datasheet
