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BUX80 - NPN Transistor

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Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Motor control High frequency and efficiency converters ABSOLUTE MAXIM

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Datasheet Details

Part number BUX80
Manufacturer INCHANGE
File Size 200.58 KB
Description NPN Transistor
Datasheet download datasheet BUX80 Datasheet
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isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Motor control ·High frequency and efficiency converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 800 V VCEO Collector-Emitter Voltage 400 V VCER Collector-Emitter Voltage RBE= 50Ω 500 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 5 A PC Collector Power Dissipation @TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERIS
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