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BUX84S Datasheet NPN High Voltage Power Transistor

Manufacturer: NXP Semiconductors

Overview: Philips Semiconductors Product specification NPN high voltage Power.

General Description

High voltage, high speed glass passivated NPN power transistor in a plastic package.

Applications:Off-line SMPS TV and monitor power supplies Inverters Electronic lighting ballasts The BUX84S is supplied in the SOT428 (DPAK) surface mounting package.

PINNING PIN 1 2 3 4 base collector1 emitter DESCRIPTION SOT428 tab 2 collector (tab) 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VCESM VCEO VEBO IC ICM IB IBM -IBM Ptot Tj, Tstg Collector-emitter voltage (peak value) Collector-emitter voltage (DC) Emitter-base voltage Collector current (DC) Collector current (peak value) Base current (DC) Base current (peak value) Reverse base current (peak value during turn-off) Total power dissipation Operating junction and storage temperature CONDITIONS VBE = 0 V base open circuit collector open circuit tp = 2 ms MIN.

Key Features

  • Fast switching.
  • Excellent thermal stability.
  • High thermal cycling performance.
  • Low thermal resistance.
  • Surface mounting package BUX84S SYMBOL c b e QUICK.

BUX84S Distributor