BUX80
BUX80 is HIGH VOLTAGE NPN SILICON POWER TRANSISTOR manufactured by STMicroelectronics.
DESCRIPTION
The BUX80 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case, particularly intended for converters, inverters, switching regulators and motors control system applications.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CER V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-emitter Voltage (V BE = 0) Collector-emitter Voltage (R BE = 50Ω ) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (Ic = 0) Collector Current Collector Peak Current Base Current Total Power Dissipation at T case Storage Temperature Max Operating Junction Temperature ≤ 40 C o
Value 800 500 400 10 10 15 5 100 -65 to 150 150
Unit V V V V A A A W o o
June 1997
1/4
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 1.1 o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
Symbol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 800 V V CE = 800 V V BE = 10 V I C = 100 m A 400 T case = 125 C o
Min.
Typ.
Max. 1 3 10
Unit m A m A m A V
V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V CER(sus) ∗ Collector-Emitter Sustaining Voltage (R BE = 50 Ω ) V CE(sat) ∗ V BE(sat) ∗ h FE ∗ t on ts tf Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Turn-on Time Storage Time Fall Time
I C = 100 m A
IC = 5 A IC = 8 A IC = 5 A IC = 8 A I C = 1.2 A IC = 5 A V CC = 250 V IC = 5 A I B2 =
- 2 A IC = 5 A I B2 =
- 2 A
IB = 1 A I B = 2.5 A IB = 1 A I B = 2.5 A V CE = 5 V I B1 = 1 A I B1 = 1 A V CC = 250 V I B1 = 1 A V CC =
- 250 V 30
1.5 3 1.4 1.8
0.5 3.5 0.5
µs µs µs
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
2/4
TO-3 MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157...
