npn transistor.
* High breakdown voltage VCEO = 140 V
* Typical ft = 20 MHz
* Fully characterized at 125 oC
Application
* Power supply
Description
The device is a NPN tra.
NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENV.
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
3 2 1
TO-3P
Figure 1. Internal schematic diagram
Table 1. Device summar.
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