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D1047 Datasheet NPN Transistor

Manufacturer: STMicroelectronics

Overview: 2SD1047 High power NPN epitaxial planar bipolar transistor.

General Description

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology.

The resulting transistor shows good gain linearity behaviour.

3 2 1 TO-3P Figure 1.

Key Features

  • High breakdown voltage VCEO = 140 V.
  • Typical ft = 20 MHz.
  • Fully characterized at 125 oC.

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