Datasheet Details
| Part number | DA112S1 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 115.79 KB |
| Description | DIODE ARRAY |
| Datasheet | DA112S1_STMicroelectronics.pdf |
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Overview: ® DA108S1 DA112S1 DIODE ARRAY Application Specific Discretes A.S.D.TM APPLICATION Protection of logic side of ISDN S-interface. Protection of I/O lines of microcontroller. Signal conditioning.
| Part number | DA112S1 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 115.79 KB |
| Description | DIODE ARRAY |
| Datasheet | DA112S1_STMicroelectronics.pdf |
|
|
|
ARRAY of 8 or 12 diodes configured by cells of 2 diodes, each cell being used to protect signal line from transient overvoltages by clamping action.
I/O 4 4 FUNCTIONAL DIAGRAM : DA112S1 COMPLIES WITH FOLLOWING STANDARDS : IEC1000-4-22level 4: 15kV (air discharge) 8kV (contact discharge) I/O 1 1 I/O 2 2 I/O 3 3 I/O 4 4 8 REF 1 7 I/O 6 6 REF 2 5 I/O 5 March 1998 - Ed:4 1/5 DA108S1 / DA112S1 ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol VRRM IPP P Tstg Tj TL Parameter Repetitivepeak reverse voltage(forone single diode) Repetitive peak forward current * Power dissipation Storage temperature range Maximum operating junction temperature Maximum lead temperature for soldering during 10s.
8/20 µs Value 18 12 0.73 - 55 to + 150 150 260 Unit V A W °C °C * The surge is repeated after the device returns to ambient temperature THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient Parameter Value 170 Unit °C/W ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol VFP VF IR Peak forward voltage Forward voltage Reverse leakage current Parameter IPP = 12A, 8/20 µs IF = 50 mA VR = 15V DA108S1 DA112S1 Max.
| Part Number | Description |
|---|---|
| DA112S | DIODE ARRAY |
| DA108S | DIODE ARRAY |
| DA108S1 | DIODE ARRAY |