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STMicroelectronics Electronic Components Datasheet

DALC12 Datasheet

LOW CAPACITANCE DIODE ARRAY FOR ESD PROTECTION

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®
Application Specific Discretes
A.S.D.TM
DALC112S1
LOW CAPACITANCE DIODE
ARRAY FOR ESD PROTECTION
MAIN APPLICATIONS
Where ESD protection for high speed datalines is
required :
LAN / WAN equipment
Computer I/O
Graphic video port
Set top box I/O
DESCRIPTION
ARRAY of 12 diodes configured by cells of 2
diodes, each cell being used to protect signal line
from transient overvoltages by clamping action.
Its very low capacitance allows to protect fast
signals with no distortion. It is particularlysuited for
the protection of graphic video ports.
SO8
FUNCTIONAL DIAGRAM
FEATURES
ARRAYOF 12 DIODESFOR ESDPROTECTION.
PEAK REVERSE VOLTAGE VRRM= 18V PER
DIODE.
VERYLOWCAPACITANCE PERDIODE: C <5pF.
VERY LOW LEAKAGE CURRENT : IR < 2 µA.
I/O 1
I/O 2
COMPLIESWITHTHE FOLLOWINGSTANDARDS :
IEC1000-4-2level 3
8 kV (air discharge)
6 kV (contactdischarge)
I/O 3
I/O 4
REF 1
I/O 6
REF 2
I/O 5
January 1998 - Ed: 4
1/3


STMicroelectronics Electronic Components Datasheet

DALC12 Datasheet

LOW CAPACITANCE DIODE ARRAY FOR ESD PROTECTION

No Preview Available !

DALC112S1
TYPICAL APPLICATION
Vcc
DALC112S1
ABSOLUTE MAXIMUM RATINGS (Tamb =25°C).
Symbol
Parameter
VRRM
Peak reverse voltage per diode
Tstg Storage temperature range
Tj Maximum junction temperature
Value
18
-55 to + 150
150
Unit
V
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25°C).
Symbol
VF
IR
C
Parameter
Forward voltage
Reverse leakage current per diode
Input capacitance between Line and GND
Vcc = 5 V, VRMS = 30 mV, F = 1 MHz
(see figure 1 below)
IF = 50 mA
VR = 15 V
Typ.
Max.
1.3
2
Unit
V
µA
7 pF
Fig 1 : Input capacitance measurement
REF2
I/O
G
VCC
REF1
+VCC connected between REF1 and REF2
Input applied :
Vcc = 5V, VRMS = 30 mV, F = 1 MHz
2/3


Part Number DALC12
Description LOW CAPACITANCE DIODE ARRAY FOR ESD PROTECTION
Maker STMicroelectronics
Total Page 3 Pages
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