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ESDA8V2-1J Datasheet Eos And Esd Transil Protection

Manufacturer: STMicroelectronics

Overview: ESDA8V2-1J EOS and ESD Transil™ protection for charger and battery.

General Description

The ESDA8V2-1J is a unidirectional single line Transil diode designed specifically for the protection of integrated circuits in portable equipment and miniaturized electonic devices subject to EOS and ESD transient overvoltages.

TM: Transil is a trademark of STMicroelectronics August 2009 Doc ID 15646 Rev 1 1/7 .st.

7 Characteristics 1 Characteristics ESDA8V2-1J Table 1.

Key Features

  • Breakdown voltage VBR = 8.2 V.
  • Unidirectional device.
  • High peak power dissipation: 500 W (8/20 µs waveform).
  • ESD protection level better than IEC 61000-4-2, level 4: 30 kV contact discharge.
  • Low leakage current (< 0.5 µA @ 5 V) Benefits.
  • High EOS and ESD protection level.
  • High integration.
  • Suitable for high density boards Complies with the following standards:.
  • IEC 61000-4-2 level 4.
  • ±15 kV (air discharge).
  • ±8 kV (contact discharge).

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