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FERD20H100S - 100V field-effect rectifier diode

Description

The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given silicon surface.

This 100 V rectifier has been optimized for use in confined casing applications where both efficiency and thermal performance matter.

Features

  • ST advanced rectifier process.
  • Stable leakage current over reverse voltage.
  • Reduced leakage current.
  • Low forward voltage drop.
  • High frequency operation.
  • Insulated package TO-220FPAB:.
  • Insulated voltage: 2000 VRMS sine.
  • ECOPACK2 compliant component.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FERD20H100S Datasheet 100 V, 20 A field-effect rectifier diode A K A TO-220AB A K A TO-220FPAB A K A K K A KA IPAK K K A A A A DPAK Product status FERD20H100S Product summary Symbol Value IF(AV) 20 A VRRM 100 V VF(max.) 0.415 V IR(max.) 140 µA T j(max.) 175 °C Features • ST advanced rectifier process • Stable leakage current over reverse voltage • Reduced leakage current • Low forward voltage drop • High frequency operation • Insulated package TO-220FPAB: – Insulated voltage: 2000 VRMS sine • ECOPACK2 compliant component Applications • Switching diode • Notebook adapter • LED lighting • DC/DC converter • MPPT Description The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given silicon surface.
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