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FERD20H100S Datasheet

100V field-effect rectifier diode

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FERD20H100S
100 V field-effect rectifier diode
Datasheet - production data
A
K
A
A
K
TO-220AB A
TO-220FPAB
A
K
A
KK
A
KA
IPAK
KK
A
A
A
A
DPAK
Features
ST advanced rectifier process
Stable leakage current over reverse voltage
Reduced leakage current
Low forward voltage drop
High frequency operation
Insulated package TO-220FPAB:
Insulated voltage: 2000 VRMS sine
ECOPACK®2 compliant component
Description
The device is based on a proprietary technology
that achieves the best in class VF/IR trade-off for a
given silicon surface. This 100 V rectifier has
been optimized for use in confined casing
applications where both efficiency and thermal
performance matter. With a lower dependency of
leakage current (IR) and forward voltage (VF) in
function of temperature, the thermal runaway risk
is reduced. Therefore, it can advantageously
replace 100 V Schottky diodes.
Table 1: Device summary
Symbol
Value
IF(AV)
VRRM
VF (max.)
IR (max.)
Tj (max.)
20 A
100 V
0.415 V
140 µA
175 °C
November 2017
DocID029022 Rev 3
This is information on a product in full production.
1/14
www.st.com


STMicroelectronics Electronic Components Datasheet

FERD20H100S Datasheet

100V field-effect rectifier diode

No Preview Available !

Characteristics
FERD20H100S
1
2/14
Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified, anode
terminals short circuited)
Symbol
Parameter
Value Unit
VRRM
IF(RMS)
IF(AV)
IFSM
Tstg
Tj
Repetitive peak reverse voltage
Forward rms current
Average forward current δ = 0.5,
square wave
TO-220AB,
DPAK, IPAK
TO-220FPAB
Surge non repetitive forward
current
TO-220AB,
TO-220FPAB
DPAK, IPAK
Storage temperature range
Maximum operating junction temperature (1)
TC = 155 °C
TC = 110 °C
tp = 10 ms
sinusoidal
100 V
40 A
A
20
A
250 A
150
-65 to +175
+175
A
°C
°C
Notes:
(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Table 3: Thermal resistance parameters
Symbol
Parameter
Rth(j-c) Junction to case
TO-220AB, DPAK, IPAK
TO-220FPAB
Value
1
3.8
Unit
°C/W
Table 4: Static electrical characteristics, anode terminals short circuited
Symbol
Parameter
Test conditions
Min. Typ. Max.
IR(1) Reverse leakage current
VF(2) Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
VR = VRRM
VR = 70 V
IF = 2 A
IF = 5 A
IF = 10 A
IF = 20 A
- 140
- 8 16
-4 7
- 0.370 0.415
- 0.315 0.365
- 0.455 0.515
- 0.450 0.510
- 0.580 0.655
- 0.550 0.605
- 0.640 0.705
Unit
µA
mA
V
Notes:
(1)Pulse test: tp = 5 ms, δ < 2%
(2)Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.415 x IF(AV) + 0.019 IF2(RMS)
DocID029022 Rev 3


Part Number FERD20H100S
Description 100V field-effect rectifier diode
Maker STMicroelectronics
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FERD20H100S Datasheet PDF






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