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FERD20H100S Datasheet

100V field-effect rectifier diode

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FERD20H100S
100 V field-effect rectifier diode
Datasheet - production data
A
KA
A
K
A
TO-220AB
K
K
A
KA
IPAK
A
K
A
TO-220FPAB
K
KA
A
DPAK
Features
ST advanced rectifier process
Stable leakage current over reverse voltage
Reduced leakage current
Low forward voltage drop
High frequency operation
Insulated package TO-220FPAB :
Insulated voltage : 2000 VRMS sine
Description
The device is based on a proprietary technology
that achieves the best in class VF/IR trade-off for a
given silicon surface. This 100 V rectifier has
been optimized for use in confined applications
where both efficiency and thermal performance
are key. With a lower dependency of leakage
current (IR) and forward voltage (VF) in function of
temperature, the thermal runaway risk is reduced.
It is highly recommended to be used in adapters
and chargers.
Table 1: Device summary
Symbol
Value
IF(AV)
VRRM
VF (max.)
IR (max.)
Tj (max.)
20 A
100 V
0.415 V
140 µA
175 °C
May 2016
DocID029022 Rev 2
This is information on a product in full production.
1/15
www.st.com


STMicroelectronics Electronic Components Datasheet

FERD20H100S Datasheet

100V field-effect rectifier diode

No Preview Available !

Characteristics
FERD20H100S
1
2/15
Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified, anode
terminals short circuited)
Symbol
Parameter
Value Unit
VRRM Repetitive peak reverse voltage
100 V
IF(RMS) Forward rms current
40 A
IF(AV)
Average forward current δ = 0.5,
square wave
TO-220AB,
DPAK, IPAK
TC = 155 °C
20
A
TO-220FPAB TC = 110 °C
A
IFSM
Surge non repetitive forward
current
TO-220AB,
TO-220FPAB
DPAK, IPAK
tp = 10 ms
sinusoidal
250 A
150 A
Tstg Storage temperature range
Tj Maximum operating junction temperature (1)
-65 to +175
+175
°C
°C
Notes:
(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Symbol
Rth(j-c)
Table 3: Thermal resistance parameters
Parameter
Junction to case
TO-220AB, DPAK, IPAK
TO-220FPAB
Value
1
3.8
Unit
°C/W
Symbol
IR(1)
VF(2)
Table 4: Static electrical characteristics, anode terminals short circuited
Parameter
Test conditions
Min. Typ. Max.
Reverse leakage current
Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
VR = VRRM
VR = 70 V
IF = 2 A
IF = 5 A
IF = 10 A
IF = 20 A
- 140
- 8 16
-4 7
- 0.370 0.415
- 0.315 0.365
- 0.455 0.515
- 0.450 0.510
- 0.580 0.655
- 0.550 0.605
- 0.640 0.705
Unit
µA
mA
V
Notes:
(1)Pulse test: tp = 5 ms, δ < 2%
(2)Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.415 x IF(AV) + 0.019 IF2(RMS)
DocID029022 Rev 2


Part Number FERD20H100S
Description 100V field-effect rectifier diode
Maker STMicroelectronics
Total Page 15 Pages
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