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FERD30H100S Datasheet

100V field-effect rectifier diode

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FERD30H100S
100 V field-effect rectifier diode
Datasheet - production data
A
K
KA
K
A
K
A
TO-220AB
A
KA
K IPAK
KA
A
DPAK
Features
ST advanced rectifier process
Stable leakage current over reverse voltage
Reduced leakage current
Low forward voltage drop
High frequency operation
Description
The device is based on a proprietary technology
that achieves the best in class VF/IR trade-off for a
given silicon surface. This 100 V rectifier has
been optimized for use in confined applications
where both efficiency and thermal performance
are key. With a lower dependency of leakage
current (IR) and forward voltage (VF) in function of
temperature, the thermal runaway risk is reduced.
It is highly recommended to be used in adapters
and chargers.
Table 1: Device summary
Symbol
Value
IF(AV)
VRRM
VF (max.)
IR (max.)
Tj (max.)
30 A
100 V
0.405 V
130 µA
175 °C
April 2016
DocID029159 Rev 1
This is information on a product in full production.
1/14
www.st.com


STMicroelectronics Electronic Components Datasheet

FERD30H100S Datasheet

100V field-effect rectifier diode

No Preview Available !

Characteristics
FERD30H100S
1 Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified, with anode
terminals short circuited)
Symbol
Parameter
Value
Unit
VRRM
IF(RMS)
IF(AV)
Repetitive peak reverse voltage
Forward rms current
Average forward current δ = 0.5,
square wave
TC = 145 °C
100 V
45 A
30 A
tp = 10 ms sinusoidal,
DPAK/IPAK
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal,
TO-220AB
150
250
A
Tstg Storage temperature range
Tj Maximum operating junction temperature (1)
-65 to +175
+175
°C
°C
Notes:
(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Symbol
Rth(j-c)
Table 3: Thermal resistance parameters
Parameter
Junction to case
Value
0.9
Unit
°C/W
Table 4: Static electrical characteristics with anode terminals short circuited
Symbol
Parameter
Test conditions
Min. Typ. Max.
Tj = 25 °C
-
VR = VRRM
IR(1) Reverse leakage current Tj = 125 °C
-
130
8 16
Tj = 125 °C VR = 70 V
-
4
7
Tj = 25 °C
Tj = 125 °C
IF = 3 A
- 0.390 0.440
- 0.350 0.405
VF(2)
Forward voltage drop
Tj = 25 °C
Tj = 125 °C
IF = 5 A
- 0.440 0.495
- 0.415 0.470
Tj = 25 °C
Tj = 125 °C
IF = 10 A
- 0.550 0.620
- 0.530 0.585
Tj = 125 °C IF = 30 A
- 0.680 0.745
Unit
µA
mA
V
Notes:
(1)Pulse test: tp = 5 ms, δ < 2%
(2)Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.424 x IF(AV) + 0.0133 IF2(RMS)
2/14 DocID029159 Rev 1


Part Number FERD30H100S
Description 100V field-effect rectifier diode
Maker STMicroelectronics
Total Page 14 Pages
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