FERD30H100S diode equivalent, 100v field-effect rectifier diode.
* ST advanced rectifier process
* Stable leakage current over reverse voltage
* Reduced leakage current
* Low forward voltage drop
* High frequency op.
where both efficiency and thermal performance are key. With a lower dependency of leakage current (IR) and forward volta.
The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given silicon surface. This 100 V rectifier has been optimized for use in confined applications where both efficiency and thermal performance are ke.
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