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FERD30L60C - 60V field-effect rectifier diode

General Description

The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given silicon surface.

This 60 V rectifier has been optimized for use in confined applications where both efficiency and thermal performance are key.

Key Features

  • ST advanced rectifier process.
  • Stable leakage current over reverse voltage.
  • Reduced leakage current.
  • Low forward voltage drop.
  • High frequency operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FERD30L60C 60 V field-effect rectifier diode Datasheet - production data A1 A2 K K K A2 K A1 TO-220AB A2 A1 D²PAK Features  ST advanced rectifier process  Stable leakage current over reverse voltage  Reduced leakage current  Low forward voltage drop  High frequency operation Description The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given silicon surface. This 60 V rectifier has been optimized for use in confined applications where both efficiency and thermal performance are key. This device is suitable for use in adapters and chargers. Table 1: Device summary Symbol Value IF(AV) VRRM VF (typ.) Tj (max.) 2 x 15 A 60 V 0.