STMicroelectronics FERD30L60C
The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given silicon surface. This 60 V rectifier has been optimized for use in confined applications where both efficiency and thermal performance are key.FEATURES
● ST advanced rectifier process● Stable leakage current over reverse voltage
● Reduced leakage current
● Low forward voltage drop
● High frequency operation
DESCRIPTION
This device is suitable for use in adapters and chargers. Table 1: Device summary Symbol Value IF(AV) VRRM VF (typ.) Tj (max.) 2 x 15 A 60 V 0.37 V 150 °C September 2017 DocID030960 Rev 1 This is information on a product in full production. 1/12 Characteristics FERD30L60C 1 Characteristics Table 2: Absolute ratings (limiting values at 25 °C, per diode, unless otherwise specified) Symbol Parameter Value