STMicroelectronics FERD30H100S
The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given silicon surface. This 100 V rectifier has been optimized for use in confined applications where both efficiency and thermal performance are key.| Part No. | FERD30H100S |
|---|---|
| Datasheet | FERD30H100S Download |
| Manufacturer |  STMicroelectronics |
| Description | 100V field-effect rectifier diode |
| Buy | Stock & Price |
FEATURES
● ST advanced rectifier process● Stable leakage current over reverse voltage
● Reduced leakage current
● Low forward voltage drop
● High frequency operation
DESCRIPTION
With a lower dependency of leakage current (IR) and forward voltage (VF) in function of temperature, the thermal runaway risk is reduced. It is highly recommended to be used in adapters and chargers. Table 1: Device summary Symbol Value IF(AV) VRRM VF (max.) IR (max.) Tj (max.) 30 A 100 V 0.405 V 130 µA 175 °C April 2016 DocID029159 Rev 1 This is information on a product in full production. 1/14 Chara
