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FERD30H100S - 100V field-effect rectifier diode

General Description

The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given silicon surface.

This 100 V rectifier has been optimized for use in confined applications where both efficiency and thermal performance are key.

Key Features

  • ST advanced rectifier process.
  • Stable leakage current over reverse voltage.
  • Reduced leakage current.
  • Low forward voltage drop.
  • High frequency operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FERD30H100S 100 V field-effect rectifier diode Datasheet - production data A K KA K A K A TO-220AB A KA K IPAK KA A DPAK Features  ST advanced rectifier process  Stable leakage current over reverse voltage  Reduced leakage current  Low forward voltage drop  High frequency operation Description The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given silicon surface. This 100 V rectifier has been optimized for use in confined applications where both efficiency and thermal performance are key. With a lower dependency of leakage current (IR) and forward voltage (VF) in function of temperature, the thermal runaway risk is reduced. It is highly recommended to be used in adapters and chargers.