Datasheet4U Logo Datasheet4U.com

FERD30H100S - 100V field-effect rectifier diode

Datasheet Summary

Description

The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given silicon surface.

This 100 V rectifier has been optimized for use in confined applications where both efficiency and thermal performance are key.

Features

  • ST advanced rectifier process.
  • Stable leakage current over reverse voltage.
  • Reduced leakage current.
  • Low forward voltage drop.
  • High frequency operation.

📥 Download Datasheet

Datasheet preview – FERD30H100S

Datasheet Details

Part number FERD30H100S
Manufacturer STMicroelectronics
File Size 342.73 KB
Description 100V field-effect rectifier diode
Datasheet download datasheet FERD30H100S Datasheet
Additional preview pages of the FERD30H100S datasheet.

📁 Similar Datasheet

  • FERA10D - Ultra fast Plastic Power Rectifiers (Gulf Semiconductor)
  • FERA16D - Ultra fast Plastic Power Rectifiers (Gulf Semiconductor)
  • FERA16G - Ultra fast Plastic Power Rectifiers (Gulf Semiconductor)
  • FERA16J - Ultra fast Plastic Power Rectifiers (Gulf Semiconductor)
  • FERA20D - Ultra fast Plastic Power Rectifiers (Gulf Semiconductor)
  • FERP10 - Ultra fast Plastic Power Rectifiers (Gulf Semiconductor)
  • FERP15K - Ultra fast Plastic Power Rectifiers (Gulf Semiconductor)
  • FERP16J - Ultra fast Plastic Power Rectifiers (Gulf Semiconductor)
  • FERP16K - Ultra fast Plastic Power Rectifiers (Gulf Semiconductor)
  • FERP20D - Ultra fast Plastic Power Rectifiers (Gulf Semiconductor)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
FERD30H100S 100 V field-effect rectifier diode Datasheet - production data A K KA K A K A TO-220AB A KA K IPAK KA A DPAK Features  ST advanced rectifier process  Stable leakage current over reverse voltage  Reduced leakage current  Low forward voltage drop  High frequency operation Description The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given silicon surface. This 100 V rectifier has been optimized for use in confined applications where both efficiency and thermal performance are key. With a lower dependency of leakage current (IR) and forward voltage (VF) in function of temperature, the thermal runaway risk is reduced. It is highly recommended to be used in adapters and chargers.
Published: |