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FERD40H100S Datasheet

40A field-effect rectifier diode

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FERD40H100S
Datasheet
100 V, 40 A field-effect rectifier diode
A
A
K
K
A
AK
KA
A
TO-220AB
TO-220FPAB
K
K
A
A
D²PAK
Product status
FERD40H100S
Product summary
Symbol
Value
IF(AV)
40 A
VRRM
100 V
T j(max.)
175 °C
VF(typ.)
0.325 V
Features
• ST patented rectifier process
• Stable leakage current over reverse voltage
• Low forward voltage drop
• High frequency operation
ECOPACK®2 compliant
Applications
• Adapter
• Gaming console power supply
• Battery charger
• DC / DC converter
Description
This single rectifier is based on a proprietary technology, enabling to achieve the best
in class VF/IR for a given silicon surface.
Packaged in TO-220AB, TO-220FPAB and D2PAK, the FERD40H100S is optimized
for use in confined applications where both efficiency and thermal performance are
key. With a lower dependency of leakage current (IR) and forward voltage (VF) in
function of temperature, the thermal runaway risk is reduced. It is highly
recommended to be used in adapters and chargers.
DS11576 - Rev 2 - March 2019
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

FERD40H100S Datasheet

40A field-effect rectifier diode

No Preview Available !

FERD40H100S
Characteristics
1 Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, anode terminals short
circuited)
Symbol Parameter
VRRM Repetitive peak reverse voltage
IF(RMS) Forward rms current
IF(AV)
Average forward current, δ = 0.5 square wave
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
Tstg Storage temperature range
Tj Maximum operating junction temperature(1)
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Value
100
60
40
440
-65 to +175
+175
Unit
V
A
A
A
°C
°C
Symbol
Rth(j-c)
Parameter
Junction to case
Table 2. Thermal resistance parameter
TO-220AB, D2PAK
TO-220FPAB
Max. value
0.8
3.3
Unit
°C/W
Table 3. Static electrical characteristics (anode terminals short circuited)
Symbol
Parameter
IR(1) Reverse leakage current
VF(2)
Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Test conditions
Tj = 25 °C
Tj = 125 °C
VR = VRRM
Tj = 125 °C
VR = 70 V
Tj = 25 °C
Tj = 125 °C
IF = 4 A
Tj = 25 °C
Tj = 125 °C
IF = 10 A
Tj = 25 °C
Tj = 125 °C
IF = 20 A
Tj = 125 °C
IF = 40 A
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
12
6
0.380
0.325
0.465
0.455
0.600
0.550
0.645
Max.
190
24
12
0.430
0.375
0.525
0.510
0.675
0.600
0.705
To evaluate the conduction losses, use the following equation:
P = 0.420 x IF(AV) + 0.009 x IF2(RMS)
For more information, please refer to the following application notes related to the power losses :
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses on a power diode
Unit
µA
mA
V
DS11576 - Rev 2
page 2/14


Part Number FERD40H100S
Description 40A field-effect rectifier diode
Maker STMicroelectronics
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