GD10HF60KD datasheet, igbt equivalent, STMicroelectronics

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Features and benefits

* Designed for automotive applications and AEC-Q101 qualified
* Low on-voltage drop (VCE(sat))
* Low Cres / Cies ratio (no cross conduction susceptibility)

Application

and AEC-Q101 qualified
* Low on-voltage drop (VCE(sat))
* Low Cres / Cies ratio (no cross conduction susceptibil.

Description

This device utilizes the advanced PowerMESH™ process for the IGBT and the Turbo 2 Ultrafast high voltage technology for the diode. The combination results in a very good trade-off between conduction losses and switching behavior rendering the product.

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