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GW100N30 - IGBT

General Description

duAdvanced high-density and high-current IGBT rotechnology with low-drop companion diode Padapted to various functions in PDP sets.

Figure 1.

lete Product(s) - ObsoleteTable 1.

Key Features

  • Optimized for sustain and energy recovery circuits in PDP.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGF100N30 STGP100N30, STGW100N30 90 A - 330 V - fast IGBT Features ■ Optimized for sustain and energy recovery circuits in PDP applications. ■ State-of-the-art STripFET™ technology ■ Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2) 3 2 1 TO-220FP 3 2 1 TO-247 ■ Very low-on voltage drop (VCE(sat)) and energy per pulse for improved panel efficiency )■ High repetitive peak current capability ct(sDescription duAdvanced high-density and high-current IGBT rotechnology with low-drop companion diode Padapted to various functions in PDP sets. 3 2 1 TO-220 Figure 1. Internal schematic diagram lete Product(s) - ObsoleteTable 1.