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GW100N30 Datasheet, STMicroelectronics

GW100N30 igbt equivalent, igbt.

GW100N30 Avg. rating / M : 1.0 rating-12

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GW100N30 Datasheet

Features and benefits


* Optimized for sustain and energy recovery circuits in PDP applications.
* State-of-the-art STripFET™ technology
* Peak collector current IRP = 330 A @ TC .

Application


* State-of-the-art STripFET™ technology
* Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2) 3 2 1.

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GW100N30 Page 1 GW100N30 Page 2 GW100N30 Page 3

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