ISB35666 array equivalent, hcmos structured array.
0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide. 3.3 V op.
The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity. The potential total gate count r.
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