L100NHS3LL Overview
This value is rated according to Rthj-pcb Optimal RDS(on) x Qg trade-off @ 4.5V Reduced switching losses Reduced conduction losses t(s) Improved junction-case ucApplication rod Switching applications te PDescription leThis product utilizes the latest advanced design orules of ST’s proprietary STripFET™ technology sand a proprietary process for integrating a bmonolithic Schottky diode. The new Power OMOSFET is...
L100NHS3LL Key Features
- 0.0032Ω
- PowerFLAT™ (6x5) STripFET™ Power MOSFET plus monolithic Schottky
- Optimal RDS(on) x Qg trade-off @ 4.5V
- Reduced switching losses
- Reduced conduction losses