M29F160BT Overview
55ns PROGRAMMING TIME 8µs per Byte/Word typical 35 MEMORY BLOCKS 1 Boot Block (Top or Bottom Location) 2 Parameter and 32 Main Blocks s s s s PROGRAM/ERASE CONTROLLER Embedded Byte/Word Program algorithm Embedded Multi-Block/Chip Erase algorithm Status Register Polling and Toggle Bits Ready/Busy Output Pin TSOP48 (N) 12 x 20mm s ERASE SUSPEND and RESUME MODES Read and Program another Block during Erase Suspend...

