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M29W320EB Key Features

  • SUPPLY VOLTAGE
  • VCC = 2.7V to 3.6V for Program, Erase and Read
  • VPP =12V for Fast Program (optional)
  • ACCESS TIMES: 70, 90ns
  • PROGRAMMING TIME
  • 10µs per Byte/Word typical
  • Double Word/ Quadruple Byte Program
  • MEMORY BLOCKS
  • Memory Array: 63 Main Blocks
  • 8 Parameter Blocks (Top or Bottom

Other M29W320EB Datasheets

Manufacturer Part Number Description
Numonyx Logo Numonyx M29W320EB 32-Mbit 3V supply Flash memory
ST Microelectronics Logo STMicroelectronics M29W320E 32-Mbit 3V Supply Flash Memory
Numonyx Logo Numonyx M29W320ET 32-Mbit 3V supply Flash memory
ST Microelectronics Logo STMicroelectronics M29W320DB 32 Mbit 4Mb x8 or 2Mb x16 / Boot Block 3V Supply Flash Memory
Numonyx Logo Numonyx M29W320DB 32-Mbit 3V Supply Flash memory

View all M29W320EB datasheets →

M29W320EB Description

TFBGA48 Connections (Top view through package) . 10 Address Inputs (A0-A20). 10 Data Inputs/Outputs (DQ0-DQ7).