M36P0R9070E0
Key Features
- Multi-chip package - 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory - 1 die of 128Mbit (8Mb x16) PSRAM Supply voltage - VDDF = VCCP = VDDQ = 1.7 to 1.95V - VPPF = 9V for fast program (12V tolerant) Electronic signature - Manufacturer Code: 20h - Device Code: 8819 Package - ECOPACK® Synchronous / asynchronous read - Synchronous Burst Read mode: 108MHz, 66MHz
- TFBGA107 (ZAC) *
- Security - 2112-bit user programmable OTP Cells - 64-bit unique device number 100,000 program/erase cycles per block *
- Flash memory
- - Asynchronous Page Read mode - Random Access: 93ns
- DataShee Programming time - 4µs typical Word program time using Buffer Enhanced Factory Program command Memory organization - Multiple Bank Memory Array: 64 Mbit Banks - Four Extended Flash Array (EFA) Blocks of 64 Kbits Dual operations - program/erase in one Bank while read in others - No delay between read and write operations Common Flash Interface (CFI) Access time: 70ns Asynchronous Page Read - Page Size: 4, 8 or 16 Words - Subsequent read within page: 20ns Low power features - Partial Array Self Refresh (PASR) - Deep Power-Down mode (DPD) Synchronous Burst Read/Write PSRAM * * * * *
- November 2005 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Rev. 1 1/26
