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M36P0R9070E0 - 512 Mbit Flash memory 128 Mbit (Burst) PSRAM

Description

6 Signal descriptions

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Features

  • Partial Array Self Refresh (PASR).
  • Deep Power-Down (DPD) Mode Programming time.
  • 4.2µs typical Word program time using Buffer Enhanced Factory Program www. DataSheet4U. com command.
  • Memory organization.
  • Multiple bank memory array: 64 Mbit banks.
  • Four Extended Flash Array (EFA) Blocks of 64 Kbits Dual operations.
  • program/erase in one Bank while read in others.
  • No delay between read and write operations Security.

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Datasheet preview – M36P0R9070E0

Datasheet Details

Part number M36P0R9070E0
Manufacturer Numonyx
File Size 213.00 KB
Description 512 Mbit Flash memory 128 Mbit (Burst) PSRAM
Datasheet download datasheet M36P0R9070E0 Datasheet
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Full PDF Text Transcription

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M36P0R9070E0 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM Supply voltage – VDDF = VCCP = VDDQ = 1.7 to 1.
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