M36P0R9070E0 Description
Address inputs (A0-A24) . 9 Data input/output (DQ0-DQ15) . 10 Flash Chip Enable input (EF).
M36P0R9070E0 Key Features
- Partial Array Self Refresh (PASR)
- Deep Power-Down (DPD) Mode
- 4.2µs typical Word program time using Buffer Enhanced Factory Program .. mand
- Memory organization
- Multiple bank memory array: 64 Mbit banks
- Four Extended Flash Array (EFA) Blocks of 64 Kbits Dual operations
- program/erase in one Bank while read in others
- No delay between read and write operations Security
- 2112-bit user programmable OTP Cells
- 64-bit unique device number 100,000 program/erase cycles per block mon Flash Interface (CFI)