M36P0R9070E0 Datasheet and Specifications PDF

The M36P0R9070E0 is a Multi-Chip Package.

Key Specifications

PackageTFBGA
Operating Voltage1.8 V
Max Voltage (typical range)1.95 V
Min Voltage (typical range)1.7 V
Length11 mm
Width8 mm
Max Operating Temp85 °C
Min Operating Temp-30 °C
Part NumberM36P0R9070E0 Datasheet
ManufacturerSTMicroelectronics
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.1 . summary
* Multi-chip package
* 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory
* 1 die of 128Mbit (8Mb x16) PSRAM Supply voltage
* VDDF = VCCP = VDDQ = 1.7 to 1.95V
* VPPF = 9V for fast program (12V tolerant) Electronic signature
* Manufacturer Code: 20h
* Device Code: .
Part NumberM36P0R9070E0 Datasheet
Description512 Mbit Flash memory 128 Mbit (Burst) PSRAM
ManufacturerNumonyx
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.1 2.2 2.3 .
* Partial Array Self Refresh (PASR)
* Deep Power-Down (DPD) Mode Programming time
* 4.2µs typical Word program time using Buffer Enhanced Factory Program command
*
*
* Memory organization
* Multiple bank memory array: 64 Mbit banks
* Four Extended Flash Array (EFA) Blocks of 6.

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