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M58BW16F - (M58BW16F / M58BW32F) Flash memories

Description

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Features

  • Supply voltage.
  • VDD = 2.7V to 3.6V (45ns) or VDD = 2.5V to 3.3V (55ns).
  • VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers High performance.
  • Access times: 45 and 55ns.
  • Synchronous Burst Reads.
  • 75MHz Effective Zero Wait-State Burst Read.
  • Asynchronous Page Reads M58BW32F memory organization:.
  • Eight 64 Kbit small parameter blocks.
  • Four 128 Kbit large parameter blocks.
  • Sixty-two 512 Kbit main blocks M58BW16F memory org.

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Other Datasheets by STMicroelectronics

Part Number Description
M58BW016BB 16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories
M58BW016BT 16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories
M58BW016DB 16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories
M58BW016DT 16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories
M58BW32F (M58BW16F / M58BW32F) Flash memories

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www.DataSheet4U.com M58BW16F M58BW32F 16 or 32 Mbit (x32, Boot Block, Burst) 3.3V supply Flash memories Preliminary Data Features ■ Supply voltage – VDD = 2.7V to 3.6V (45ns) or VDD = 2.5V to 3.3V (55ns) – VDDQ = VDDQIN = 2.4V to 3.
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