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M58BW32F - (M58BW16F / M58BW32F) Flash memories

Download the M58BW32F datasheet PDF. This datasheet also covers the M58BW16F variant, as both devices belong to the same (m58bw16f / m58bw32f) flash memories family and are provided as variant models within a single manufacturer datasheet.

Description

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Features

  • Supply voltage.
  • VDD = 2.7V to 3.6V (45ns) or VDD = 2.5V to 3.3V (55ns).
  • VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers High performance.
  • Access times: 45 and 55ns.
  • Synchronous Burst Reads.
  • 75MHz Effective Zero Wait-State Burst Read.
  • Asynchronous Page Reads M58BW32F memory organization:.
  • Eight 64 Kbit small parameter blocks.
  • Four 128 Kbit large parameter blocks.
  • Sixty-two 512 Kbit main blocks M58BW16F memory org.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M58BW16F_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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www.DataSheet4U.com M58BW16F M58BW32F 16 or 32 Mbit (x32, Boot Block, Burst) 3.3V supply Flash memories Preliminary Data Features ■ Supply voltage – VDD = 2.7V to 3.6V (45ns) or VDD = 2.5V to 3.3V (55ns) – VDDQ = VDDQIN = 2.4V to 3.
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