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M58PR256LE - (M58PR001LE - M58PR512LE) Flash NOR / Mobile Terminal

This page provides the datasheet information for the M58PR256LE, a member of the M58PR001LE (M58PR001LE - M58PR512LE) Flash NOR / Mobile Terminal family.

Description

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Features

  • Supply voltage.
  • VDD = 1.7 V to 2.0 V for program, erase and read.
  • VDDQ = 1.7 V to 2.0 V for I/O buffers.
  • VPP = 9 V for fast program Synchronous/asynchronous read.
  • Synchronous burst read mode: 108 MHz, 66 MHz.
  • Asynchronous page read mode.
  • Random access: 96 ns Programming time.
  • 4.2 µs typical word program time using Buffer Enhanced Factory Program command Memory organization.
  • Multiple bank memory array: 32 Mbit banks (2.

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Datasheet preview – M58PR256LE

Datasheet Details

Part number M58PR256LE
Manufacturer STMicroelectronics
File Size 1.01 MB
Description (M58PR001LE - M58PR512LE) Flash NOR / Mobile Terminal
Datasheet download datasheet M58PR256LE Datasheet
Additional preview pages of the M58PR256LE datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com M58PR256LE M58PR512LE M58PR001LE 256-Mbit, 512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program Synchronous/asynchronous read – Synchronous burst read mode: 108 MHz, 66 MHz – Asynchronous page read mode – Random access: 96 ns Programming time – 4.
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