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M74HCT367 Datasheet

HEX BUS BUFFER 3-STATE HCT367 NONINVERTING / HCT368 INVERTING

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M74HCT367
HEX BUS BUFFER
WITH 3 STATE OUTPUT NON INVERTING
s HIGH SPEED:
tPD = 14ns (TYP.) at VCC = 4.5V
s LOW POWER DISSIPATION:
ICC = 4µA(MAX.) at TA=25°C
s COMPATIBLE WITH TTL OUTPUTS :
)VIH = 2V (MIN.) VIL = 0.8V (MAX)
t(ss SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 6mA (MIN)
ucs BALANCED PROPAGATION DELAYS:
dtPLH tPHL
ros PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 367
te PDESCRIPTION
leThe M74HCT367 is an high speed CMOS HEX
oBUS BUFFER 3-STATE OUTPUTS fabricated
swith silicon gate C2MOS technology.
bThis device contains six buffers, four buffers are
Ocontrolled by an enable input (G1) and the other
-two buffers are controlled by the other enable
)input (G2); the outputs of each buffer group are
t(senabled when G1 and/or G2 inputs are held low,
DIP
SOP
TSSOP
ORDER CODES
PACKAGE
TUBE
T&R
DIP
SOP
TSSOP
M74HCT367B1R
M74HCT367M1R M74HCT367RM13TR
M74HCT367TTR
and when held high, these outputs are disabled in
a high-impedance state.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
Obsolete ProducPIN CONNECTION AND IEC LOGIC SYMBOLS
September 2001
1/9


STMicroelectronics Electronic Components Datasheet

M74HCT367 Datasheet

HEX BUS BUFFER 3-STATE HCT367 NONINVERTING / HCT368 INVERTING

No Preview Available !

M74HCT367
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
1, 15
2, 4, 6, 10,
12, 14
3, 5, 7, 9, 11,
13
8
16
SYMBOL
G1, G2
1A to 6A
NAME AND FUNCTION
3 State Output Enable
Input
Data Inputs
1Y to 6Y Data Outputs
GND
VCC
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
t(s)INPUTS
cG
duL
roL
H
PX: Don’t Care
teZ: High Impedance
An
L
H
X
OUTPUTS
Yn
L
H
Z
leABSOLUTE MAXIMUM RATINGS
bsoSymbol
Parameter
Value
Unit
OVCC Supply Voltage
-0.5 to +7
V
-VI DC Input Voltage
-0.5 to VCC + 0.5
V
t(s)VO DC Output Voltage
-0.5 to VCC + 0.5
V
IIK DC Input Diode Current
± 20
mA
ucIOK DC Output Diode Current
± 20
mA
dIO DC Output Current
± 35
mA
roICC or IGND DC VCC or Ground Current
± 70
mA
PPD Power Dissipation
500(*)
mW
teTstg Storage Temperature
-65 to +150
°C
leTL Lead Temperature (10 sec)
300 °C
oAbsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
snot implied
Ob(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
VI
VO
Top
tr, tf
Parameter
Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
Input Rise and Fall Time (VCC = 4.5 to 5.5V)
Value
4.5 to 5.5
0 to VCC
0 to VCC
-55 to 125
0 to 500
Unit
V
V
V
°C
ns
2/9


Part Number M74HCT367
Description HEX BUS BUFFER 3-STATE HCT367 NONINVERTING / HCT368 INVERTING
Maker ST Microelectronics
Total Page 9 Pages
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Similar Datasheet

1 M74HCT367 HEX BUS BUFFER 3-STATE HCT367 NONINVERTING / HCT368 INVERTING
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2 M74HCT368 HEX BUS BUFFER 3-STATE HCT367 NONINVERTING / HCT368 INVERTING
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